中国材料大会2026

本论坛聚焦“后摩尔时代”突破经典微缩极限的两大并行路径：延续摩尔（More Moore）与超越摩尔（More than Moore）。我们将重点探讨不依赖传统技术的纳米/原子级制造新原理，包括激光微纳制造、定向自组装、原子层沉积/刻蚀、扫描探针加工、二维材料边缘合成、离子束/电子束诱导沉积等手段，如何实现原子级精度的结构与器件构筑。同时，论坛关注通过三维异质集成将不同功能材料（如二维半导体、铁电/铁磁材料、相变材料、量子点等）垂直堆叠，突破传统平面互连瓶颈。我们诚邀青年学者分享在原子尺度下对材料电学、光学、热学、磁学性质进行精确调控的创新成果，探索从单个原子、分子到功能器件的跨尺度协同设计策略，为后摩尔时代计算、存储与感知芯片提供颠覆性材料与架构基础。

This session focuses on two parallel routes beyond classical scaling limits in the post-Moore era: “More Moore” (downscaling) and “More than Moore” (diversification). We highlight unconventional atomic/nano-scale manufacturing techniques — such as laser-based nanomanufacturing, directed self-assembly, atomic layer deposition/etching, scanning probe lithography, edge-assisted synthesis of 2D materials, and ion/electron beam induced deposition — that enable precise structural and device fabrication at the atomic level. Furthermore, we explore 3D heterogeneous integration to vertically stack multi-functional materials (e.g., 2D semiconductors, ferroelectrics/ferromagnets, phase-change materials, quantum dots), overcoming planar interconnect bottlenecks. Young researchers are invited to present innovative work on tailoring electrical, optical, thermal, and magnetic properties at atomic scale, and to discuss cross-scale co-design strategies from single atoms/molecules to functional devices, paving the way for disruptive materials and architectures for post-Moore computing, memory, and sensing chips.